features l high uv sensitivity: qe 75 % ( =200 nm) l suppressed ir sensitivity l low dark current applications l analytical equipment l optical measurement equipment, etc. photodiode si photodiode for uv to visible, precision photometry; suppressed ir sensitivity s1227 series general ratings / absolute maximum ratings absolute maximum ratings package active area size effective active area reverse voltage v r max. operating temperature topr storage temperature tstg type no. dimensional outline/ window material * (mm) (mm) (mm 2 ) (v) (c) (c) s1227-16bq ? /q s1227-16br ? /r 2.7 15 1.1 5.9 5.9 s1227-33bq ? /q s1227-33br ? /r 6 7.6 2.4 2.4 5.7 S1227-66BQ ? /q s1227-66br ? /r 8.9 10.1 5.8 5.8 33 s1227-1010bq ? /q s1227-1010br ? /r 15 16.5 10 10 100 5 -20 to +60 -20 to +80 electrical and optical characteristics (typ. ta=25 c, unless otherwise noted) photo sensitivity s (a/w) short circuit current isc 100 lx spectral response range peak sensitivity wavelength p p 200 nm he-ne laser min. typ. dark current i d v r =10 mv max. temp. coefficient t cid rise time tr v r =0 v r l =1 k ? terminal capacitance ct v r =0 v f=10 khz shunt resistance rsh v r =10 mv (g ? ) nep type no. (nm) (nm) min. typ. 633 nm (a) (a) (pa) (times/ c) (s) (pf) min. typ. (w/hz 1/2 ) s1227-16bq 190 to 1000 0.36 0.10 0.12 0.34 2 3.2 2.5 10 -15 s1227-16br 320 to 1000 0.43 - - 0.39 2.2 3.7 5 0.5 170 2 20 2.1 10 -15 s1227-33bq 190 to 1000 0.36 0.10 0.12 0.34 2 3.0 2.5 10 -15 s1227-33br 320 to 1000 0.43 - - 0.39 2.2 3.7 5 0.5 160 2 20 2.1 10 -15 S1227-66BQ 190 to 1000 0.36 0.10 0.12 0.34 11 16 5.0 10 -15 s1227-66br 320 to 1000 0.43 - - 0.39 13 19 20 2 950 0.5 5 4.2 10 -15 s1227-1010bq 190 to 1000 0.36 0.10 0.12 0.34 32 44 8.0 10 -15 s1227-1010br 320 to 1000 720 0.43 - - 0.39 36 53 50 1.12 7 3000 0.2 2 6.7 10 -15 * window material q: quartz glass, r: resin coating 1
si photodiode s1227 series 0.1 0 photo sensitivity (a/w) 190 400 600 800 1000 wavelength (nm) 0.3 0.2 (typ. ta=25 ?c) 0.4 0.5 0.6 0.7 s1227-br s1227-bq s1227-bq s1227-br spectral response photo sensitivity temperature characteristic kspdb0094ea temperature coefficient (%/ ? c) wavelength (nm) (typ. ) 0 190 400 600 800 1000 +1.0 +0.5 +1.5 -0.5 kspdb0030eb rise time load resistance ( ? ) (typ. ta = 25 ? c, v r = 0 v) 10 2 10 ns 10 3 10 4 10 5 s1227-16bq/br, -33bq/br s1227-1010bq/br S1227-66BQ/br 100 ns 1 s 10 s 100 s 1 ms kspdb0095ea dark current reverse voltage (v) (typ. ta = 25 ? c) 0.01 100 fa 0.1 1 10 1 pa 10 pa 100 pa 1 na S1227-66BQ/br s1227-16bq/br s1227-33bq/br s1227-1010bq/br kspdb0096eb shunt resistance ambient temperature ( ? c) (typ. v r = 10 mv) -200 20406080 10 k ? 100 k ? 1 m ? 10 m ? 100 m ? 1 g ? 10 g ? 100 g ? 1 t ? s1227-33bq/br s1227-16bq/br S1227-66BQ/br s1227-1010bq/br shunt resistance vs. ambient temperature kspdb0097ea rise time vs. load resistance dark current vs. reverse voltage 2
si photodiode s1227 series kspda0094ea kspda0095ea kspda0096ea kspda0097ea ? s1227-33bq ? s1227-33br dimensional outlines (unit: mm) ? s1227-16bq ? s1227-16br 8.5 0.2 2.7 0.1 0.5 1.5 0.1 6.2 anode mark 0.5 lead 12.2 13.5 0.13 15 0.15 0.85 active area hole (2 ) 0.8 photosensitive surface 8.5 0.2 2.7 0.1 1.5 0.1 6.2 anode mark 13.5 0.13 15 0.15 0.35 active area hole (2 ) 0.8 0.5 lead photosensitive surface resin coating may extend a maximum of 0.1 mm above the upper surface of the package. 7.6 0.1 6.0 0.1 active area 0.1 2.0 0.1 10.5 0.75 0.35 4.5 0.2 anode terminal mark 0.5 lead photosensitive surface 6.6 0.3 5.0 0.3 7.6 0.1 6.0 0.1 active area 2.0 0.1 10.5 0.65 0.35 6.6 0.3 4.5 0.2 5.0 0.3 anode terminal mark 0.5 lead photosensitive surface resin coating may extend a maximum of 0.1 mm above the upper surface of the package. 3
hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2004 hamamatsu photonics k.k. si photodiode s1227 series cat. no. kspd1036e04 aug. 2004 dn anode terminal mark 0.5 lead photosensitive surface 16.5 0.2 15.0 0.15 active area 2.15 0.1 10.5 0.8 0.3 15.1 0.3 12.5 0.2 13.7 0.3 resin coating may extend a maximum of 0.1 mm above the upper surface of the package. 10.1 0.1 8.9 0.1 active area 2.0 0.1 10.5 0.65 0.3 9.2 0.3 7.4 0.2 8.0 0.3 anode terminal mark 0.5 lead photosensitive surface resin coating may extend a maximum of 0.1 mm above the upper surface of the package. 10.1 0.1 8.9 0.1 active area 0.1 2.0 0.1 10.5 0.75 0.3 9.2 0.3 7.4 0.2 8.0 0.3 anode terminal mark 0.5 lead photosensitive surface s1227-1010bq s1227-1010br kspda0100ea kspda0101ea kspda0098ea kspda0099ea S1227-66BQ s1227-66br anode terminal mark 0.5 lead photosensitive surface 16.5 0.2 15.0 0.15 active area 2.15 0.1 10.5 0.9 0.3 15.1 0.3 12.5 0.2 13.7 0.3 0.1 4
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